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| savantic semiconductor product specification silicon pnp power transistors 2SA1386 2SA1386a d escription with to-3pn package complement to type 2sc3519/3519a applications audio and general purpose pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit 2SA1386 -160 v cbo collector-base voltage 2SA1386a open emitter -180 v 2SA1386 -160 v ceo collector-emitter voltage 2SA1386a open base -180 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -4 a p c collector power dissipation t c =25 130 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1386 2SA1386a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA1386 -160 v (br)ceo collector-emitter breakdown voltage 2SA1386a i c =-25ma ;i b =0 -180 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v 2SA1386 v cb =-160v; i e =0 i cbo collector cut-off current 2SA1386a v cb =-180v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe dc current gain i c =-5a ; v ce =-4v 50 180 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 500 pf f t transition frequency i c =-2a ; v ce =-12v 40 mhz switching times t on turn-on time 0.30 s t s storage time 0.70 s t f fall time i c =-5a;r l =4 c i b1 =-i b2 =-1a v cc =40v 0.20 s h fe classifications o p y 50-100 70-140 90-180 savantic semiconductor product specification 3 silicon pnp power transistors 2SA1386 2SA1386a package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SA1386 2SA1386a |
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